The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17a-M_103-1~13]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Tue. Mar 17, 2026 9:00 AM - 12:30 PM JST
Tue. Mar 17, 2026 12:00 AM - 3:30 AM UTC
M_103 (Main Bldg.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-M_103-1]Frequency dependence of polymer surface modification using an atmospheric-pressure microplasma jet

Yuki Taniguchi1, Keita Kunioka1, 〇JunSeok Oh1, Tatsuru Shirafuji1, Akimitsu Hatta2 (1.Osaka Motropol. Univ, 2.Kochi Univ. Technol.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[17a-M_103-2]Uniform surface modification of AlN ceramics via plasma self-terminating modification

〇RONGYAN SUN1, TONG TAO1, YUJI OHKUBO1, KAZUYA YAMAMURA1 (1.The Univ. of Osaka)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[17a-M_103-3]Plasma oxidation ~ real-time characterization of SiO2/Si interface passivation ~

〇Shota Nunomura1, Kunihiro Kamataki2, Masaharu Shiratani2 (1.AIST, 2.Kyushu Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_103-4]Effect of nitrogen radical post-treatment thorough metal gate electrode on gate stack interface structure

〇Mizuki Yano1, Honoka Kido1, Hiroki Kondo1 (1.Kyushu Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_103-5]Improvement of constant current stress durability of high-k gate dielectric films by nitrogen radical post-treatment and its dependence on TiN thickness

〇Honoka Kido1, Mizuki Yano1, Hiroki Kondo1 (1.Kyushu Univ. ISEE)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[17a-M_103-6]Development of Low damage Plasma Process with High Purity Ozone

〇Soichiro Motoda1, Tetsuya Nishiguchi1, Yuma Okadome1, Ayata Harayama1, Haruki Yamada1 (1.MEIDEN NPI)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_103-7]Development of Low-GWP Etching Gas for TSV as a SF6 Alternative Using Digital Twin

〇Natsumi Ichikawa1, Ishikawa Takuji1, Ishibushi Miki1, Okamoto Suzuka1, Nojiri Yasuhiro1, Hayashi Hisataka1 (1.Daikin Industries, Ltd)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_103-8]Mechanisms of Highly Selective SiOCN Etching Using NF3-based Plasma

〇Takahiro Goya1, Akiko Hirata1, Masanaga Fukasawa1, Wataru Mizubayashi1, Yoshihiro Hayashi1 (1.SFRC AIST)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-M_103-9]In-plane Distribution Control of Radical Etching System Using ECR Plasma

〇Taku Iwase1, Yuji Inoue1, Yusuke Nakatani2, Yasushi Sonoda2 (1.Hitachi, Ltd. R&D Group, 2.Hitachi High-Tech Corp.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-M_103-10]Ion Shielding Structure in Radical Etching System with Magnetic Field

〇Yuji Inoue1, Taku Iwase1, Yusuke Nakatani2, Yasushi Sonoda2 (1.Hitachi, Ltd. R&D Group, 2.Hitachi High-Tech Corp)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-M_103-11]Advanced Sidewall Shaping with Radical/Ion Switching in RAXIO®

〇Toshikio Takimoto1, Yusuke Nakatani1, Yasushi Sonoda1, Kiyohiko Sato1, Taku Iwase2 (1.Hitachi High-Tech Corp., 2.Hitachi, Ltd. R&D Group)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_103-12]Deposition Technique for Realizing Two-step TiN Etching Process

〇Yudai Mashiko1, Taku Iwase1, Makoto Satake1, Yasushi Sonoda2, Motohiro Tanaka2, Naoyuki Kofuji2, Kenji Maeda2 (1.Hitachi Ltd., R&D Group, 2.Hitachi High-Tech Corp.)
12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[17a-M_103-13]Method for Gas Dissociation Efficiency Enhancement in Microwave ECR Plasma

〇Mamoru Yakushiji1, Kenichi Kuwahara1, Masaki Yamada2 (1.Hitachi High-Tech Corp., 2.Hitachi, Ltd. R&D Group)
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