[17a-M_103-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-M_103-11] Advanced Sidewall Shaping with Radical/Ion Switching in RAXIO^®

〇Toshikio Takimoto¹, Yusuke Nakatani¹, Yasushi Sonoda¹, Kiyohiko Sato¹, Taku Iwase² (1.Hitachi High-Tech Corp., 2.Hitachi, Ltd. R&D Group)

Keywords:

dry etching,RAXIO,sidewall etching control

In Hitachi High-Tech's dry etching tool RAXIO, the R/I switch function enables precise control of the ratio between RIE and Radical-etch. For Radical-etch applied to narrow gaps and high-aspect-ratio patterns, a challenge arises where the amount of sidewall etching decreases toward the trench bottom. To address this issue, we examined a combination of “Cyclic CVD” for depositing a protective film on the sidewalls and the R/I switch function.