[17a-M_103-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_103-4] Effect of nitrogen radical post-treatment thorough metal gate electrode on gate stack interface structure

〇Mizuki Yano¹, Honoka Kido¹, Hiroki Kondo¹ (1.Kyushu Univ.)

Keywords:

Gate stack structure,Nitrogen radicals,Post-deposition treatment

As a method for elemental profile control in metal gate/high-k gate stacks for nanosheet-generation devices, we investigated the effects of post-deposition nitrogen radical treatment using only radicals with ion species eliminated. For TiN/HfO₂/SiO₂/Si structure, nitrogen incorporation into the TiN layer and oxide films was confirmed after the nitrogen radical treatment, while no significant increase in the saturation capacitance was observed, suggesting that the treatment from the TiN surface induced structural modifications in the HfSiO/SiO₂stacked layers.