[17a-M_103-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_103-5] Improvement of constant current stress durability of high-k gate dielectric films by nitrogen radical post-treatment and its dependence on TiN thickness

〇Honoka Kido¹, Mizuki Yano¹, Hiroki Kondo¹ (1.Kyushu Univ. ISEE)

Keywords:

nitrogen radical,leakage current,breakdown

With the aim of application to nanosheet transistors, nitrogen radical irradiation was performed on high-k gate stacks with TiN gate electrodes. As a result of the nitrogen radical post-treatment, the leakage current of MOS capacitors (TiN/HfSiO_x/SiO₂/Si) after constant current stress was suppressed. In addition, the samples with a TiN thickness of 20 nm exhibited an increased injected charge to breakdown compared with those with a TiN thickness of 5 nm, regardless of the presence or absence of nitrogen radical treatment. In this presentation, the TiN thickness dependence of leakage current characteristics before and after constant current stress, as well as the effect of nitrogen radical post-treatment, will be reported.