[17a-M_103-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[17a-M_103-6] Development of Low damage Plasma Process with High Purity Ozone

〇Soichiro Motoda¹, Tetsuya Nishiguchi¹, Yuma Okadome¹, Ayata Harayama¹, Haruki Yamada¹ (1.MEIDEN NPI)

Keywords:

plasma,ozone,low damage

Oxygen plasma processes are an important fundamental technology in semiconductor manufacturing processes, used for cleaning organic contaminants, resist removal, and interface oxidation treatment. In recent years, new materials, such as metal wiring and interlayer insulating films (low-K), which are cutting-edge semiconductor materials, are known to be sensitive to heat and plasma, and low damage is required. We used high-purity ozone (80 vol% or higher) as the plasma source gas and investigated whether there was any change in the substrate surface.