[17a-M_103-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-M_103-9] In-plane Distribution Control of Radical Etching System Using ECR Plasma

〇Taku Iwase¹, Yuji Inoue¹, Yusuke Nakatani², Yasushi Sonoda² (1.Hitachi, Ltd. R&D Group, 2.Hitachi High-Tech Corp.)

Keywords:

dry etching,RAXIO,radical processing

The increasing miniaturization and three-dimensional integration of semiconductors underscores the importance of isotropic processing and highlights radical etching. This method uses charged particles and relies solely on radicals for processing. However, achieving uniform processing on large-diameter wafers remains challenging. This study analyzed the relationship between ECR plasma magnetic field conditions and radical density distribution through simulation and experimentation. The study also evaluated controllability via etching rate distribution. The results confirmed that altering the magnetic field changes the radical generation region, affecting uniformity and etching rate.