[17a-M_278-1~13] CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[17a-M_278-12] Observation of electric field dependences of multi-leakage paths formed on ferroelectric InZnO_x/Hf_0.5Zr_0.5O₂/TiN capacitors using laser-based photoemission electron microscopy

〇(D)Yuki Itoya¹, Hirokazu Fujiwara^3,4, Cedric Bareille², Toshiyuki Taniuchi^3,4, Masaharu Kobayashi¹ (1.IIS, 2.ISSP, 3.GSFS, 4.MIRC)

Keywords:

Ferroelectric material,Ferroelectric capacitor,Dielectric breakdown

To establish dielectric breakdown model for HfO₂-based ferroelectric (FE-HfO₂) capacitors, we conducted in-situ observation of leakage path formation (LPF) on InZnO_x(2:1)/HfZrO(1:1)/TiN ferroelectric capacitors using laser-based photoemission electron microscopy. A clustered distribution forms under high-field stress, while a nearly uniform distribution emerges under low-field stress. At middle fields, a mixed LPF distribution, combining clustered and uniform characteristics, is observed. These observations provide useful information for understanding the electric-field dependence of LPF and for discussing the dielectric breakdown behavior in FE-HfO₂ capacitors.