[17a-M_278-1~13] CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5 | The 73rd JSAP Spring Meeting 2026

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Oral presentationCS Code-sharing session : 【CS.3】Code-sharing Session of 6.1 & 13.3 & 13.5

[17a-M_278-1~13]CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

Tue. Mar 17, 2026 9:00 AM - 12:30 PM JST
Tue. Mar 17, 2026 12:00 AM - 3:30 AM UTC

M_278 (Main Bldg.)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-M_278-1]Orientation dependencies of ferroelectric and piezoelectric properties in CeO₂-HfO₂ thick films

〇Shunshi Imamura¹, Kazuki Okamoto¹, Yukari Inoue², Hiroshi Funakubo¹ (1.Science Tokyo, 2.TDK Corp.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_278-2]PLD growth of ferroelectric hafnia under Ar-O₂ mixed gas atmosphere

〇Rintaro Maki¹, Yufan Shen¹, Sota Fuji¹, Daisuke Kan², Yuichi Shimakawa¹ (1.Kyoto Univ., 2.Univ. of Osaka)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_278-3]Growth and Characterization of Polar-Axis Oriented Epitaxial HfO₂-based Ferroelectric films

〇Yutaro Tsuchiya¹, Yoshiko Nakamura¹, Satsuki Koga¹, Syunshi Imamura¹, Kazuki Okamoto¹, Wakiko Yamaoka², Yasunaga Kagaya², Yukari Inoue², Hiroshi Funakubo¹ (1.Science Tokyo, 2.TDK Corporation)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_278-4]Direct growth of ferroelectric Y-doped HfO₂ thin films on silicon via RF magnetron sputtering

〇Shinya Kondo^1,2, Tomoshige Ono², Shunsuke Kobayashi³, Paul Schwermer⁴, Kazuki Okamoto⁵, Hiroshi Funakubo⁵, Tatuo Fujii², Teranishi Takashi^2,5, Akira Kishimoto², Uwe Schroeder⁴, Tomoaki Yamada^1,6 (1.Nagoya Univ., 2.Okayma Univ., 3.JFCC, 4.NaMLab, 5.Science Tokyo, 6.Science Tokyo MDX)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-M_278-5]Effects of Seed Layers on Crystallization of (Hf,Zr)O₂ Thin Films by Flash Lamp Annealing

〇Yukiya Sano¹, Tomoya Mifune¹, Hideaki Tanimura^1,2, Yuma Ueno², Yusuke Tani², Hironori Fujisawa¹, Seiji Nakashima¹, Ai I. Osaka¹, Shinichi Kato², Takumi Mikawa² (1.Univ. of Hyogo, 2.SCREEN Semiconductor Solutions Co., Ltd.)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[17a-M_278-6]The effect of Y concentration and oxygen vacancy on orthorhombic phase stabilization in Y-doped HfO₂ thin films

〇Kota Udagawa¹, Takahiro Tsukamoto¹, Hideo Isshiki¹ (1.Univ. of Electro-Comm)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_278-7]Ferroelectricity of Orthorhombic HfO₂ Crystal Simulated by Molecular Dynamics

〇(B)Sora Yamamoto¹, Yusuke Nishimura¹, Jumpei Ohba¹, Takanobu Watanabe¹ (1.Waseda Univ.)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_278-8]Reproduction of Ferroelectric Characteristic of cristaline HfO₂and Interfacial Dipole at α-HfO₂/SiO₂ Interface by Machine Learning Molecular Dynamics Simulations

〇(B)Hiroki Nomura¹, Yusuke Nishimura¹, Junpei Ohba¹, Machika Naito¹, Takanobu Watanabe¹ (1.Waseda Univ.)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_278-9]Understanding Depth Profile of Crystal Phases in Ferroelectric Hf_xZr_1-xO₂ Thin Films Capped with Topmost ZrO₂ Layer

〇Rina Takahisa¹, Takashi Onaya^1,2, Atsushi Tamura¹, Koji Kita¹ (1.GSFS, Univ. of Tokyo, 2.NIMS)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-M_278-10]Why HfO2 ferroelectricity disappears below ~5 nm thickness?

〇Akira Toriumi¹, Shinji Migita² (1.None, 2.AIST)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)English Presentation

[17a-M_278-11]Correlation of Pinch Loop, Wake-Up, and Imprint in Sub-5 nm HZO Metal-Ferroelectric-Metal Capacitor

〇(DC)Zhenhong Liu¹, Mitsuru Takenaka¹, Shinichi Takagi², Kasidit Toprasertpong¹ (1.Univ. Tokyo, 2.Teikyo Univ.)

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[17a-M_278-12]Observation of electric field dependences of multi-leakage paths formed on ferroelectric InZnO_x/Hf_0.5Zr_0.5O₂/TiN capacitors using laser-based photoemission electron microscopy

〇(D)Yuki Itoya¹, Hirokazu Fujiwara^3,4, Cedric Bareille², Toshiyuki Taniuchi^3,4, Masaharu Kobayashi¹ (1.IIS, 2.ISSP, 3.GSFS, 4.MIRC)

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[17a-M_278-13]Local C–V Mapping Observation of Electric-Field-Cycling-Induced Changes in HfO₂-Based Ferroelectric Capacitors

〇Yoshiomi Hiranaga¹, Yuki Itoya², Masaharu Kobayashi² (1.Tohoku Univ. RIEC, 2.Univ. Tokyo IIS)

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Session Details

[17a-M_278-1~13]CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

[17a-M_278-1]Orientation dependencies of ferroelectric and piezoelectric properties in CeO2-HfO2 thick films

[17a-M_278-2]PLD growth of ferroelectric hafnia under Ar-O2 mixed gas atmosphere

[17a-M_278-3]Growth and Characterization of Polar-Axis Oriented Epitaxial HfO2-based Ferroelectric films

[17a-M_278-4]Direct growth of ferroelectric Y-doped HfO2 thin films on silicon via RF magnetron sputtering

[17a-M_278-5]Effects of Seed Layers on Crystallization of (Hf,Zr)O2 Thin Films by Flash Lamp Annealing

[17a-M_278-6]The effect of Y concentration and oxygen vacancy on orthorhombic phase stabilization in Y-doped HfO2 thin films

[17a-M_278-7]Ferroelectricity of Orthorhombic HfO2 Crystal Simulated by Molecular Dynamics

[17a-M_278-8]Reproduction of Ferroelectric Characteristic of cristaline HfO2 and Interfacial Dipole at α-HfO2/SiO2 Interface by Machine Learning Molecular Dynamics Simulations

[17a-M_278-9]Understanding Depth Profile of Crystal Phases in Ferroelectric HfxZr1-xO2 Thin Films Capped with Topmost ZrO2 Layer