[17a-M_278-1~13] CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-M_278-3] Growth and Characterization of Polar-Axis Oriented Epitaxial HfO₂-based Ferroelectric films

〇Yutaro Tsuchiya¹, Yoshiko Nakamura¹, Satsuki Koga¹, Syunshi Imamura¹, Kazuki Okamoto¹, Wakiko Yamaoka², Yasunaga Kagaya², Yukari Inoue², Hiroshi Funakubo¹ (1.Science Tokyo, 2.TDK Corporation)

Keywords:

ferroelectric,HfO2,PLD method

Since the discovery of ferroelectricity in hafnium oxide (HfO₂)–based materials, these materials have attracted significant attention as promising ferroelectrics because of their excellent scalability and compatibility with conventional CMOS processes. However, few studies have experimentally evaluated fundamental properties such as spontaneous polarization. To clarify these properties, films in which the polar axis is aligned parallel to the applied electric field are required. In this study, we grew polar-axis-oriented epitaxial HfO₂-based ferroelectric films on a bottom electrode.