[17a-M_278-1~13] CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[17a-M_278-6] The effect of Y concentration and oxygen vacancy on orthorhombic phase stabilization in Y-doped HfO₂ thin films

〇Kota Udagawa¹, Takahiro Tsukamoto¹, Hideo Isshiki¹ (1.Univ. of Electro-Comm)

Keywords:

ferroelectric thin film,hafnium dioxide,oxygen vacancy

In this study, Y-doped HfO₂ thin films were fabricated using digital processing DC sputtering, enabling systematic control of Y concentration and oxygen vacancy density. X-ray diffraction analysis revealed that increasing Y concentration effectively suppresses the monoclinic phase and promotes orthorhombic phase. In contrast, within the investigated range, oxygen vacancy concentration had a limited impact on orthorhombic phase formation, indicating that Y concentration plays a more dominant role in stabilizing the orthorhombic phase.