Presentation Information
[17a-S2_201-11]Dry Etching of Epitaxially Grown Si0.7Ge0.3 Using HBr Plasma
〇Sota Ishii1, Kotaro Ozaki2, Eita Yano1, Ibuki Saburi2, Yuki Imai1, Takayoshi Tsutsumi3, Kenji Ishikawa3, Yuji Yamamoto4,2, Wei-Chen Wen4, Katsunori Makihara2,4 (1.Nagoya Univ, 2.Nagoya Univ. Eng, 3.Nagoya Univ. cLPS, 4.IHP)
Keywords:
HBr