[17a-S2_203-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[17a-S2_203-2] Gate Bias Dependence of Phonon-limited Electron Mobility in Si Nano-sheet MOSFET

〇Koichi Fukuda¹, Junichi Hattori¹, Yoshihiro Hayashi¹ (1.AIST)

Keywords:

semiconductor,nanosheet,mobility

The gate-bias dependence of phonon-limited electron mobility in silicon nanosheet MOSFETs was investigated. Quantum confinement states were self-consistently calculated using Poisson-Schrodinger coupling, and the phonon-limited mobility was evaluated based on the obtained wave functions. The results show that, in double-gate structures, the electron mobility remains nearly independent of inversion charge density in the weak inversion regime, which is distinct from conventional bulk MOSFET behavior.