[17a-S2_203-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-S2_203-8] Reduction of leakage current of HfO₂ gate stacks by low thermal budget FLA

〇Hayato Watanabe¹, Katsuhiro Mitsuda¹, Yuito Maki¹, Yukinori Morita², Hiroyuki Ota², Yoshihiro Hayashi², Shinichi Kato¹, Takumi Mikawa¹ (1.SCREEN Semiconductor Solutions, 2.SFRC AIST)

Keywords:

annealing,gate stack,HfO2

With the continued scaling of logic devices, HfO₂ has emerged as a key material for gate dielectrics. Post-deposition annealing (PDA) is critical for mitigating defects introduced during film deposition. In this study, we investigate the influence of PDA performed via flash lamp annealing (FLA) under a low thermal budget on the electrical characteristics of HfO₂-based gate stacks.