[17a-S4_203-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-S4_203-11] Reconsideration of Misconception of Drain Current Saturation for MOSFETs

〇Naoyuki Shigyo¹ (1.Free Engineer)

Keywords:

pinchoff,velocity saturation,drain current saturation

When the drain voltage is increased, the drain current saturates. Traditionally, the reason for the saturation has been interpreted as the charge at the drain end of the channel being zero, pinchoff. However, when the charge is zero, the carrier velocity becomes infinite due to the current continuity, which is physically incorrect. In 1980, it was shown that the charge does not become zero when the drain current saturates by taking the velocity saturation into account. In this paper, reconsideration of the drain current saturation is described using the channel length dependence of the saturation current and saturation voltage.