[17a-S4_203-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-S4_203-8] Theoretical Calculation of Mobility Anisotropy in (111) Ge Double-Gate MOSFETs

〇Koichi Fukuda¹, Junichi Hattori¹, Tatsuro Maeda¹ (1.AIST)

Keywords:

semiconductor,Ge CFET,electron mobility

In this study, the directional dependence of electron mobility in (111)-oriented germanium double-gate MOSFETs is investigated using a self-consistent simulation combining the Poisson-Schrodinger method and a cellular automaton approach. By accounting for the anisotropic effective mass and subband occupation of L valleys, we find that individual valley mobilities exhibit strong angular dependence, while the total mobility remains nearly isotropic due to compensation among degenerate valleys.