[17a-W8E_101-1~11] 13.7 Compound and power devices, process technology and characterization

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-W8E_101-10] AlSiO thin films deposited by mist-CVD toward gate insulator application in GaN-based MOS devices

〇Zenji Yatabe¹, Yu Ishihara², Yusui Nakamura², Tetsuya Sakata³, Toshinobu Fujimura³ (1.Hokkaido Univ., 2.Kumamoto Univ., 3.NOF Corp.)

Keywords:

AlSiO,Mist-CVD,GaN

AlSiO gate insulators are promising candidates for GaN-based vertical transistors due to their wide bandgap relative to GaN, higher dielectric constant than SiO₂, and higher crystallization temperature than Al₂O₃. AlSiO gate dielectrics are generally deposited using vacuum-based processes such as plasma-enhanced atomic layer deposition (PEALD). In this study, AlSiO thin films were deposited on Si substrates using mist chemical vapor deposition, an atmospheric-pressure process with a relatively high deposition rate, and their fundamental physical properties were characterized.