The 73rd JSAP Spring Meeting 2026
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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[17a-W8E_101-1~11]13.7 Compound and power devices, process technology and characterization

Tue. Mar 17, 2026 9:00 AM - 12:00 PM JST
Tue. Mar 17, 2026 12:00 AM - 3:00 AM UTC
W8E_101 (West Bldg. 8)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-W8E_101-1]Fabrication of InP/InGaAs lateral HBTs via selective growth in dielectric microcavities

〇Shota Watanabe1, Yasuyuki Miyamoto1 (1.Science Tokyo)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[17a-W8E_101-2]Evaluation of InGaP etching characteristics in Ar plasma atomic layer etching using HI and Cl2 dose gases for InP-based HBTs

〇Shuhei Arai1, Yuta Shiratori1, Takuya Hoshi1, Shirou Ozaki1, Fumito Nakajima1 (1.NTT, Inc.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[17a-W8E_101-3]Tunnel transport through deep levels in p-type diamond Schottky barrier diodes

〇Makoto Kawano1, Yoshitaka Taniyasu1, Kazuyuki Hirama1 (1.NTT BRL)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-W8E_101-4]Bias Voltage Dependence of Diamond MOSFET with fMAX > 120 GHz

Niloy Chandra Saha1, Masanori Eguchi2, Toshiyuki Oishi1, Atsushi Tomiki3, 〇Makoto Kasu1,4 (1.Diamond Semiconductor Research Center, Saga Univ., 2.Synchrotron Research Center, Saga Univ., 3.JAXA ISAS, 4.Diamond Semiconductor Co., Ltd.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-W8E_101-5]Fabrication of 6.8 W Diamond MOSFETs (Gate Width: 7.2 mm)

〇(M1C)Haruka Hashimoto1, Niloy Chandra Saha1, Masanori Eguchi2, Makoto Kasu1,3 (1.Diamond Semiconductor Research Center., Saga Univ., 2.Synchrotron Light Application Center, Saga Univ., 3.Diamond Semiconductor Co., Ltd)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-W8E_101-6]192 h DC Continuous Operation of Diamond MOSFETs with Molding

〇(M1)Yoshiki Muta1, Saha Niloy Chandra1, Masanori Eguchi2, Toshiyuki Oishi1, Atsushi Tomiki3, Makoto Kasu1,4 (1.Diamond Semiconductor Research Center, Saga Univ., 2.Synchrotron Light Application Center, Saga Univ., 3.ISAS/JAXA, 4.Diamond Semiconductor Co., Ltd)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-W8E_101-7]Challenges and solutions for GaN epitaxial growth on ion-cut substrates

〇Kokichi Fujita1, Tatsuro Sawada1, Ryusui Wada1, Tsuyoshi Yamasaki1, Naoyoshi Komatsu1, Kazuki Isoyama1, Etsuro Shimizu1 (1.KYOCERA Corporation)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-W8E_101-8]Demonstration of GaN-HEMT devices using ion-cut GaN substrates

〇Tatsuro Sawada1, Ryusui Wada1, Koukichi Fujita1, Tsuyoshi Yamasaki1, Naoyoshi Komatsu1, Kazuki Isoyama1, Etsuro Shimizu1 (1.KYOCERA Corporation)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-W8E_101-9]Differences in temperature dependence of threshold voltage shift under positive bias stress due to PDA conditions in AlSiO-Gated GaN MOSFETs

〇Yuki Ichikawa1, Takumi Hirata1, Masakazu Kanechika2, Tetsu Kachi2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-W8E_101-10]AlSiO thin films deposited by mist-CVD toward gate insulator application in GaN-based MOS devices

〇Zenji Yatabe1, Yu Ishihara2, Yusui Nakamura2, Tetsuya Sakata3, Toshinobu Fujimura3 (1.Hokkaido Univ., 2.Kumamoto Univ., 3.NOF Corp.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-W8E_101-11]Characterization of defects near the GaN surface induced by sputter deposition of SiO2

〇(B)Masanari Takaoka1, Masahiro Hara1, Qiang Chen1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.UOsaka)
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