Presentation Information
[17a-W8E_101-11]Characterization of defects near the GaN surface induced by sputter deposition of SiO2
〇(B)Masanari Takaoka1, Masahiro Hara1, Qiang Chen1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.UOsaka)
Keywords:
GaN,DLTS,SBD
