[17a-W8E_101-1~11] 13.7 Compound and power devices, process technology and characterization

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-W8E_101-4] Bias Voltage Dependence of Diamond MOSFET with f_MAX > 120 GHz

Niloy Chandra Saha¹, Masanori Eguchi², Toshiyuki Oishi¹, Atsushi Tomiki³, 〇Makoto Kasu^1,4 (1.Diamond Semiconductor Research Center, Saga Univ., 2.Synchrotron Research Center, Saga Univ., 3.JAXA ISAS, 4.Diamond Semiconductor Co., Ltd.)

Keywords:

diamond,power device

We fabricate diamond MOSFETs with the power-gain cut-off frequency, f_MAX, >120 GHz, and measure RF small signal characteristics for various bias voltages, and have found diamond semiconductor's unique properties.