[17a-W8E_101-1~11] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-W8E_101-5] Fabrication of 6.8 W Diamond MOSFETs (Gate Width: 7.2 mm)

〇(M1C)Haruka Hashimoto¹, Niloy Chandra Saha¹, Masanori Eguchi², Makoto Kasu^1,3 (1.Diamond Semiconductor Research Center., Saga Univ., 2.Synchrotron Light Application Center, Saga Univ., 3.Diamond Semiconductor Co., Ltd)

Keywords:

diamond semiconductor

Diamond is anticipated as a next-generation power semiconductor material due to its 5.47 eV bandgap, high breakdown electric field strength, and high mobility. However, achieving high current capability remains challenging for diamond devices while maintaining high voltage withstand capability. Therefore, this study reports the fabrication of a diamond MOSFET with a long gate width (W_G = 7.2 mm), aiming to further enhance the current and power handling capabilities of diamond MOSFETs.