[17a-W8E_101-1~11] 13.7 Compound and power devices, process technology and characterization

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-W8E_101-6] 192 h DC Continuous Operation of Diamond MOSFETs with Molding

〇(M1)Yoshiki Muta¹, Saha Niloy Chandra¹, Masanori Eguchi², Toshiyuki Oishi¹, Atsushi Tomiki³, Makoto Kasu^1,4 (1.Diamond Semiconductor Research Center, Saga Univ., 2.Synchrotron Light Application Center, Saga Univ., 3.ISAS/JAXA, 4.Diamond Semiconductor Co., Ltd)

Keywords:

Diamond

Diamond is a semiconductor with a bandgap of 5.47 eV and is expected to be a next-generation power semiconductor for high-power and high-frequency applications. For the practical application of diamond semiconductors, it is essential to establish high durability and operational stability during continuous operation. We report the first continuous operation measurement of a molded diamond MOSFET, designed to eliminate the effects of atmospheric exposure on the MOSFET surface.