[17a-W8E_307-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[17a-W8E_307-1] [The 59th Young Scientist Presentation Award Speech] Large-Area Growth of GaAs Nanowires with Near-Unity Vertical Yield and Lot-to-Lot Reproducibility on SiO_x/Si(111) Wafers via Droplet Etching

〇Keisuke Minehisa¹, Mahiro Sano¹, Takuto Goto¹, Kaito Nakama¹, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE)

Keywords:

nanowire,III-V compound semiconductor,molecular beam epitaxy (MBE)

We report a self-catalyzed growth method for GaAs nanowires (NWs) with high-density (>10⁸ cm^-2) and near-unity vertical yield (>99%) on 2-inch SiO_x/Si(111) wafers using molecular beam epitaxy based on the Ga droplet etching (DE) technique on SiO_x. By systematically varying only the Ga deposition time during DE, the number density of vertical NWs can be tuned over 2 orders of magnitude, ranging from the low-10⁷ to high-10⁸ cm^-2. Furthermore, we establish a single in-situ calibration protocol that enables highly reproducible NW growth across different substrate lots by fine-tuning solely the Ga deposition time without altering any other growth parameters.