The 73rd JSAP Spring Meeting 2026
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Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17a-W8E_307-1~10]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Mar 17, 2026 9:15 AM - 12:00 PM JST
Tue. Mar 17, 2026 12:15 AM - 3:00 AM UTC
W8E_307 (West Bldg. 8)
Chair : Keisuke YAMANE(Toyohashi Univ. of Tech.), Ryo Nakao(Lumentum)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[17a-W8E_307-1][The 59th Young Scientist Presentation Award Speech] Large-Area Growth of GaAs Nanowires with Near-Unity Vertical Yield and Lot-to-Lot Reproducibility on SiOx/Si(111) Wafers via Droplet Etching

〇Keisuke Minehisa1, Mahiro Sano1, Takuto Goto1, Kaito Nakama1, Fumitaro Ishikawa1 (1.Hokkaido Univ. RCIQE)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-W8E_307-2]Characteristic Crystal Structure Changes in Nitrogen δ-Doped GaAs Nanowires

〇Mahiro Sano1,2, Keisuke Minehisa1,2, Kantaro Sugihara1,2, Hidetoshi Hashimoto1,2, Yudai Yamashita3, Yoshitaka Taniyasu3, Kazuyuki Hirama3, Kazuhide Kumakura1, Fumitaro Ishikawa1 (1.Hokkaido Univ. RCIQE, 2.Hokkaido Univ. IST, 3.NTT BRL)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-W8E_307-3]Controlling Optical Characteristics of GaAs/GaNAs/GaAs Core-Multishell Nanowires by the GaNAs Shell Widths and Its High-Quality Growth

〇Yusuke Shiomi1,2, Mahiro Sano1,2, Keisuke Minehisa1,2, Yudai Yamashita3, Yoshitaka Taniyasu3, Kazuyuki Hirama3, Kazuhide Kumakura1, Fumitaro Ishikawa1 (1.Hokkaido Univ. RCIQE, 2.Hokkaido Univ. IST, 3.NTT BRL)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-W8E_307-4]Molecular Beam Epitaxial Growth of GaAs/GaNAsBi/GaAs Core-Multishell Quantum Well Nanowires

〇Yoshifumi Shiota1,3, Takuto Goto2,3, Fumitaro Ishikawa3 (1.Hokkaido Univ., 2.Hokkaido Univ. IST., 3.Hokkaido Univ. RCIQE)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[17a-W8E_307-5]Characterization of InP/AlInP core multi shell nanowires by selective-area MOVPE

〇Yo Horiguchi1,2, Yuki Azuma2, Ryosei Uchida2, Keita Taniyama2, Junichi Motohisa2, Katsuhiro Tomioka2 (1.Hokkaido Univ, 2.rciqe)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-W8E_307-6]Electric properties of GaSb nanowires grown by MBE

〇(D)Soh Komatsu1, Masashi Akabori1 (1.CNMT, JAIST)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-W8E_307-7]Enhancement of second harmonic generation in highly strained <111>-oriented heterostructure nanowires

〇Guoqiang Zhang1,2, Masato Takiguchi1,2, Siyu Chen1, Xuejun Xu1, Hideki Gotoh1,3, Haruki Sanada1 (1.NTT BRL, 2.NTT NPC, 3.Hiroshima Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-W8E_307-8]Fabrication of InP/InGaAsP Double-Heterostructure LEDs on SOI (001) Substrates Using Lateral ART and Selective Regrowth Methods

〇Hiroya Homma1, Takuro Fujii1, Hiroki Sugiyama1, Tatsurou Hiraki1, Tomonari Sato1, Shinji Matsuo1 (1.NTT Inc.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-W8E_307-9]GaSb/GaP Heteroepitaxy for Large-Area III-V Thermo-Radiative Diodes

〇(M1C)Tensei Kawasaki1, Keito Sagane1, Kazuki Nagasawa1, Yamato Kyuno1, Junpei Ota1, Keisuke Yamane1 (1.Toyohashi tech)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-W8E_307-10]Self-assembly of symmetric InAs quantum dots with low density on (111)A surfaces by droplet epitaxy

〇Takaaki Mano1, Akihiro Ohtake1, Nikita Kulesh1, Anton Bolyachikin1, Takuya Kadohira1, Yusuke Hayashi1, Takashi Kuroda1 (1.NIMS)
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