[17a-W8E_307-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-W8E_307-10] Self-assembly of symmetric InAs quantum dots with low density on (111)A surfaces by droplet epitaxy

〇Takaaki Mano¹, Akihiro Ohtake¹, Nikita Kulesh¹, Anton Bolyachikin¹, Takuya Kadohira¹, Yusuke Hayashi¹, Takashi Kuroda¹ (1.NIMS)

Keywords:

quantum dots,droplet epitaxy,InAs

Recently, we have attempted droplet epitaxial growth of InAs QDs on (111)A surfaces in a lattice-mismatched system. While single photon emissions at standard telecommunication wavelengths (1.5 um) from the QDs have been confirmed, many of the QDs exhibited anisotropic shape . In this paper, we report on the droplet epitaxial growth of highly symmetric InAs QDs on InP (111)A with low density by utilizing the annealing induced structural evolution of uncapped QDs.