[17a-W8E_307-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-W8E_307-7] Enhancement of second harmonic generation in highly strained <111>-oriented heterostructure nanowires

〇Guoqiang Zhang^1,2, Masato Takiguchi^1,2, Siyu Chen¹, Xuejun Xu¹, Hideki Gotoh^1,3, Haruki Sanada¹ (1.NTT BRL, 2.NTT NPC, 3.Hiroshima Univ.)

Keywords:

second-harmonic generation,Strain,quantum heterostructure

Because of their excellent optical properties and one-dimensional structure, III–V compound semiconductor nanowires have attracted considerable attention and have shown great promise for applications in various fields. In particular, the nonlinear optical properties of InP and InAs are highly attractive for many photonic applications. However, owing to their relatively low second-order nonlinear susceptibility, enhancing the second-harmonic generation (SHG) signal from these materials remains challenging. Here, we demonstrate the experimental realization of enhanced SHG using highly strained [111]-oriented nanowires.