[17a-W8E_307-1~10] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

11:00 〜 11:15

[17a-W8E_307-7] 〈111〉方位高歪みヘテロナノワイヤの2次高調波信号増強

〇章 国強^1,2、滝口 雅人^1,2、Siyu Chen¹、Xuejun Xu¹、後藤 秀樹^1,3、眞田 治樹¹ (1.NTT物性基礎研、2.NTTナノフォトセンタ、3.広島大)

キーワード：

二次高調波、歪、量子構造

Because of their excellent optical properties and one-dimensional structure, III–V compound semiconductor nanowires have attracted considerable attention and have shown great promise for applications in various fields. In particular, the nonlinear optical properties of InP and InAs are highly attractive for many photonic applications. However, owing to their relatively low second-order nonlinear susceptibility, enhancing the second-harmonic generation (SHG) signal from these materials remains challenging. Here, we demonstrate the experimental realization of enhanced SHG using highly strained [111]-oriented nanowires.