[17a-W8E_307-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-W8E_307-8] Fabrication of InP/InGaAsP Double-Heterostructure LEDs on SOI (001) Substrates Using Lateral ART and Selective Regrowth Methods

〇Hiroya Homma¹, Takuro Fujii¹, Hiroki Sugiyama¹, Tatsurou Hiraki¹, Tomonari Sato¹, Shinji Matsuo¹ (1.NTT Inc.)

Keywords:

direct growth of III-V semiconductors on Si,selective growth,LED

By using the lateral ART method and selective regrowth, a 200-µm-long p-i-n LED based on InP-related materials was monolithically integrated on an SOI (001) substrate. The fabricated device exhibited good diode characteristics and uniform infrared emission, demonstrating its potential as an on-chip III–V light source for silicon photonics circuits.