Presentation Information
[17a-W8E_307-9]GaSb/GaP Heteroepitaxy for Large-Area III-V Thermo-Radiative Diodes
〇(M1C)Tensei Kawasaki1, Keito Sagane1, Kazuki Nagasawa1, Yamato Kyuno1, Junpei Ota1, Keisuke Yamane1 (1.Toyohashi tech)
Keywords:
Molecular Beam Epitaxy,Narrow bandgap,Thermo-Radiative
This research investigates GaSb heteroepitaxy on GaP substrates to facilitate the large-area production of thermal radiative power generation devices, addressing the inherent brittleness and scaling limitations of conventional GaSb substrates. Using Molecular Beam Epitaxy (MBE), the growth conditions were optimized by evaluating the relationship between crystal quality and surface morphology.
Although the narrowest XRD FWHM was observed at a growth temperature of 590°C, a temperature of 530°C and an Sb/Ga flux ratio of 4 were identified as the optimal conditions due to superior surface flatness. The resulting p-GaSb/n-GaP heterojunction exhibited clear rectifying behavior in I-V characteristics and GaSb-derived emission in photoluminescence (PL) measurements. These results demonstrate the successful fabrication of a prototype III-V thermal radiative diode on a GaP platform.
Although the narrowest XRD FWHM was observed at a growth temperature of 590°C, a temperature of 530°C and an Sb/Ga flux ratio of 4 were identified as the optimal conditions due to superior surface flatness. The resulting p-GaSb/n-GaP heterojunction exhibited clear rectifying behavior in I-V characteristics and GaSb-derived emission in photoluminescence (PL) measurements. These results demonstrate the successful fabrication of a prototype III-V thermal radiative diode on a GaP platform.