[17a-W9_324-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-W9_324-10] High-Transmittance Position Sensitive Detector Using Ga-Doped SnO2

〇Yamato Ono¹, Tanaka Tomohiro¹, Kajii Hirotake², Mikawa Michio¹, Takeuti Touya¹, Fujita Suzuka¹, Murakami Hiroshi¹, Tanaka Kunihiko³, Kanai Ayaka³, Morimune Taitirou¹ (1.NIT Kagawa., 2.Osaka Univ., 3.Nagaoka Univ tech.)

Keywords:

Optical device

This study developed a transparent optical position detection sensor that transmits visible light while being sensitive to ultraviolet light in the 320–370 nm range. Using an oxide semiconductor and transparent electrodes, it achieved an average visible light transmittance of 51%. Current changes corresponding to the position of ultraviolet irradiation were confirmed, with a linearity error of 14%.