[17a-W9_324-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-W9_324-3] Improved Thermal Stability in Thin-Film InO_x FETs Using PEALD-AlO_x Films

〇(M1)Kazuki Ishiyama^1,2, Chen Chia-Tsong², Toshifumi Irisawa², Kasidit Toprasertpong³, Tatsuro Maeda² (1.Nihon univ., 2.AIST, 3.Tokyo univ.)

Keywords:

oxide semiconductor,TFT,InOx