[17a-W9_324-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-W9_324-4] Improvement of Transistor Performance using oxide thin films fabricated
by Mist-CVD

〇KEIGO EBATO¹, SIMIZU KOUSAKU¹ (1.Nihon Univ.)

Keywords:

Mist-CVD method

Cost reduction is a critical issue in semiconductor device fabrication, and thin-film deposition processes account for a large portion of the manufacturing cost. The mist chemical vapor deposition (Mist-CVD) method offers advantages such as high safety, low cost, and low environmental impact compared with sputtering and plasma-enhanced CVD methods [1], [2]. In this study, ozone treatment and atomic oxygen treatment were applied after film deposition, and their effects on the electrical characteristics of thin-film transistors (TFTs) were investigated. In addition, defect states within the band gap in the bulk of the films were evaluated using the constant photocurrent method (CPM).