Presentation Information
[17a-W9_324-4]Improvement of Transistor Performance using oxide thin films fabricated
by Mist-CVD
〇KEIGO EBATO1, SIMIZU KOUSAKU1 (1.Nihon Univ.)
Keywords:
Mist-CVD method
Cost reduction is a critical issue in semiconductor device fabrication, and thin-film deposition processes account for a large portion of the manufacturing cost. The mist chemical vapor deposition (Mist-CVD) method offers advantages such as high safety, low cost, and low environmental impact compared with sputtering and plasma-enhanced CVD methods [1], [2]. In this study, ozone treatment and atomic oxygen treatment were applied after film deposition, and their effects on the electrical characteristics of thin-film transistors (TFTs) were investigated. In addition, defect states within the band gap in the bulk of the films were evaluated using the constant photocurrent method (CPM).