[17a-W9_324-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-W9_324-9] Large Area Transferable Oxide Gate Dielectric Layers Grown on Graphene by Mist Chemical Vapor Deposition

Shunsuke Yamamura¹, Kuddus Abdul², 〇Shinichiro Mouri¹ (1.Ritsumeikan Univ., 2.R-GIRO)

Keywords:

van der Waals epitaxy,Oxide Gate Dielectric Film,Graphene

Graphene grown on a sapphire substrate coated with a Cu(111) thin film was employed as the growth substrate, and the deposition temperature of 350 °C was found to be crucial for successful transferable film formation. After the growth of the oxide insulating film, the underlying copper layer was etched away, enabling the exfoliation and transfer of large-area thin films. In this presentation, we will describe the details of the transfer technique and discuss the properties of the transferred thin films.