[17p-M_103-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-M_103-1] Electronic properties and dissociation channels of CF₃CH₂CF₃ molecule

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:

CF3CH2CF3,Etching gas,Primarily dissociation process

Primarily Dissociation routes are discussed by using computational chemistry. Briefly summarized, CF₃⁺ and CF₃CH₂CF₂⁺ ions are predominantly produced in the CF₃CH₂CF₃ ionization threshold region (14.0 eV) and CF₂=CH₂⁺ ionization occurs in the higher energy region at 16.6 eV. In the excitation process, CF₃CH₂CF₃ predominantly dissociates to C₃F₇ + F and slightly dissociates to CF₃CH₂ + CF₃ and CF₃CHCF₃ + H. In the electron attachment process, CF₃CHCF₃- and F- ion may be produced at approximately 2.5 and 3.0 eV respectively.