[17p-M_103-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment | The 73rd JSAP Spring Meeting 2026

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Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17p-M_103-1~12]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Tue. Mar 17, 2026 2:00 PM - 5:15 PM JST
Tue. Mar 17, 2026 5:00 AM - 8:15 AM UTC

M_103 (Main Bldg.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-M_103-1]Electronic properties and dissociation channels of CF₃CH₂CF₃molecule

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-M_103-2]Electronic properties and dissociation channels of CF₃CHFCHF₂molecule

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-M_103-3]Dry Etching Simulation Using Machine Learning Potentials

〇Kei Ikeda¹ (1.Mitsubishi Chemical Corporation)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[17p-M_103-4]Comparison of Metal Surface Behavior under Directional Hydrogen Irradiation: A Molecular Dynamics Study

〇Kousuke Yamamoto¹, Hisashi Higuchi¹, Yumiko Kawano¹, Kazuki Yamada¹, Hu Li² (1.TEL Tech. Sol. Ltd., 2.TEL America, Inc.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-M_103-5]Unveiling the intrinsic stress formation mechanism of hydrogenated amorphous carbon films (a-C:H) through data-driven analysis of ab-initio molecular dynamics study

〇Yusuke Ando¹, Hu Li², Jianping Zhao², Masaaki Matsukuma³, Peter Ventzek², Kenji Ishikawa⁴ (1.Nagoya Univ. Eng., 2.Tokyo Electron America, Inc., 3.Tokyo Electron Technology Solutions Ltd., 4.Nagoya Univ. cLPS)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-M_103-6]Investigation of Feature Engineering Methods for Improving Machine Learning Accuracy Based on Plasma and Material Information Science (PaMIS)

〇KUNIHIRO KAMATAKI¹, W. Sukma Fitriani², Yushi Sato¹, Yosei Kurosaki¹, Tsukasa Masamoto¹, Daisuke Yamashita¹, Takamasa Okumura¹, Naho Itagaki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ. ISEE, 2.Kyushu Univ. IMI.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[17p-M_103-7]Quantitative Assessment of Plasma Processes Based on Diversity Metrics

〇Masaharu Shiratani¹, Sukma Fitriani¹, Kunihiro Kamataki¹ (1.Kyushu Univ.)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[17p-M_103-8]Formation of WSi/SiO2 Layers by Microwave Discharge Hydrogen Plasma Irradiation on WO3/SiC

〇Kento Imai¹, Daichi Ogura¹, Sota Muroya¹, Tetsuya Sato¹, Shin-ichi Motoyama² (1.Yamanashi Univ., 2.Miyatsu Co., LTD)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[17p-M_103-9]Effects of TMS Gas Flow Rates on Change Si Content in Si-DLC Films Prepared by GIPP-CVD Method introducing different TMS Gas Flow rate

〇Seigo Makida¹, Toru Harigai¹, Taketo Nagai¹, Hiroyuki Kosaka¹ (1.Gifu Univ)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[17p-M_103-10]Effect of Resistive-Heating-Induced Bias on Graphene Growth on Si Substrates using High-Power Pulsed Sputtering Plasma

〇Akihiro Iwata¹, Shotaro Yamada¹, Masanori Shinohara¹, Takashi Matsumoto² (1.Fukuoka Univ., 2.Tokyo Electron Technology Solutions Ltd.)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-M_103-11]Evaluation of structural evolution in Si thick film anodes for lithium-ion batteries using atmospheric-pressure, very high-frequency plasma

〇(M1)Koki Hiromoto¹, Farrel Dzaudan Naufal¹, Koki Enomoto¹, Hiromasa Ohmi¹, Hiroaki Kakiuchi¹ (1.Univ. Osaka)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-M_103-12]Steering Control of Cathode Spot for Efficient Cathode Utilization in High-Rate Vacuum Arc Evaporation Systems for TiN Film Formation

〇Shogo Ochi¹, Mirano Oneda¹, Genki Sano¹, Haru Sano¹, Hirofumi Takikawa¹, Takahiro Hattori², Hiroki Gima² (1.Toyohashi Univ. Technol., 2.OSG Corp.)

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