[17p-M_103-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[17p-M_103-8] Formation of WSi/SiO2 Layers by Microwave Discharge Hydrogen Plasma Irradiation on WO3/SiC

〇Kento Imai¹, Daichi Ogura¹, Sota Muroya¹, Tetsuya Sato¹, Shin-ichi Motoyama² (1.Yamanashi Univ., 2.Miyatsu Co., LTD)

Keywords:

microwave,silicidation,H2 plasma

SiC is a promising material for next generation power devices; however, post implantation activation requires high temperature annealing at 1500-2000 deg C. In this study, fundamental heating experiments were conducted using a combination of hydrogen recombination heat and microwave heating. Hydrogen microwave excited plasma was irradiated onto Si and SiC substrates coated with WO3 thin films. As a result, substrate temperatures of 700-800 deg C were achieved within 1-2 min, and XPS analysis confirmed the reduction of WO3 and the simultaneous formation of a WSi SiO2 structure.