Presentation Information
[17p-M_B07-1]Evaluation of Semiconductor Materials and Devices
Using Scanning Nonlinear Dielectric Microscopy
-Focusing on MOS Interface Analysis and Carrier Distribution Observation in Atomic-Layer Semiconductors-
〇Yasuo Cho Cho1, Kohei Yamasue2 (1.Tohoku Univ. NICHe, 2.Tohoku Univ. RIEC)
Keywords:
scanning nonliear dielectric microscopy,atomically thin semiconductor,MOS interface
Scanning Nonlinear Dielectric Microscopy was developed as a microscope to visualize ferroelectric polarization distribution. Since nonlinear dielectric phenomena in dielectrics are extremely small, SNDM was designed from the outset with world-leading sensitivity capable of detecting capacitance changes as small as 10-22 F/√Hz, making it highly effective for semiconductor measurements as well.
The lecture will briefly outline the measurement principle before focusing on MOS interface analysis and carrier distribution observation in atomic-layer semiconductors to explain the latest research findings.
The lecture will briefly outline the measurement principle before focusing on MOS interface analysis and carrier distribution observation in atomic-layer semiconductors to explain the latest research findings.