Session Details
[17p-M_B07-1~10]Frontiers of Semiconductor Characterization Techniques
Tue. Mar 17, 2026 1:30 PM - 5:40 PM JST
Tue. Mar 17, 2026 4:30 AM - 8:40 AM UTC
Tue. Mar 17, 2026 4:30 AM - 8:40 AM UTC
M_B07 (Main Bldg.)
[17p-M_B07-1]Evaluation of Semiconductor Materials and Devices
Using Scanning Nonlinear Dielectric Microscopy
-Focusing on MOS Interface Analysis and Carrier Distribution Observation in Atomic-Layer Semiconductors-
〇Yasuo Cho Cho1, Kohei Yamasue2 (1.Tohoku Univ. NICHe, 2.Tohoku Univ. RIEC)
[17p-M_B07-2]Characterization of Individual Trap Levels at Semiconductor Interfaces Using Non-Contact Atomic Force Microscopy
Takahiro Ono1, Mizuki Ohashi1, Tomohiro Shigeno1, Yuuki Yasui1, Yutaro Uchida1, Koji Kita1, 〇Yoshiaki Sugimoto1 (1.Univ. Tokyo)
[17p-M_B07-3]Electrically-Detected-Magnetic-Resonance (EDMR) Spectroscopy for Identifications of Process-Induced Defects in Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)
〇Takahide Umeda1 (1.Univ. of Tsukuba)
[17p-M_B07-4]TEM atomic resolution analysis of advanced semiconductor devices and materials
〇Nobuyuki Ikarashi1 (1.Nagoya Univ. IMaSS)
[17p-M_B07-5]In Situ TEM Observation during Semiconductor Processing and Device Operation: Application to Solid-Phase Crystallization
〇Manabu Tezura1, Takanori Asano1, Riichiro Takaishi1, Mitsuhiro Tomita1, Masumi Saitoh1, Hiroki Tanaka1 (1.Frontier Technology R&D Inst.)
[17p-M_B07-6]Advancement of Temperature Evaluation Techniques for Nanoscale Devices
〇Ken Uchida1 (1.Univ. Tokyo)
[17p-M_B07-7]Relationship between Physical Properties and Pattern Collapse Rate in Sublimation Drying
〇Hiroyuki Fukue1, Ryuta Tsukahara1, Chen Kuang1, Sosuke Hori1, Naoya Torikai2 (1.SCREEN Semiconductor Solutions Co. ltd., 2.Grad. Sch. of Eng., Mie Univ.)
[17p-M_B07-8]Advanced 4D-XPS Data Analysis Platform for Precise Reconstruction of Depth Profilesvia Integrated Deep Learning and Statistical Approaches
〇Satoshi Toyoda1, Masaki Ando2, Atsushi Ogura2,3, Toyohiko Kinoshita1, Masatake Machida1 (1.Vacuum Products, 2.Meiji University, 3.MREL)
[17p-M_B07-9]Analysis of dopant atom arrangements using quantum beam holography
〇Tomohiro Matsushita1 (1.NAIST)
[17p-M_B07-10]Surface Analysis Using Ion Beam for Semiconductor Device
〇Junichiro Sameshima1, Yoshihiko Nakata1, Taichi Suda1, Yumi Hayashi1, Shino Kosaka1, Masahiro Saito1, Tetsuya Kogita1, Takashi Yamamoto1 (1.Toray Research Center)
