[17p-M_B07-1~10] Frontiers of Semiconductor Characterization Techniques

2:15 PM - 2:40 PM JST(5:15 AM - 5:40 AM UTC)

[17p-M_B07-3] Electrically-Detected-Magnetic-Resonance (EDMR) Spectroscopy for Identifications of Process-Induced Defects in Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)

〇Takahide Umeda¹ (1.Univ. of Tsukuba)

Keywords:

semiconductor device,process-induced defect,ESR spectroscopy

We present ability, basic principles, practical know-how, and potential of electrically-detected ESR (electron-spin-resonance) spectroscopy on semiconductor devices. ESR spectroscopy enables us to identify the origins of point defects in semiconductors and insulators. Electrically-detected ESR (EDMR) technique can expand its ability to process-induced defects in small-sized semiconductor devices. We show successful examples of defect identifications in Si and 4H-SiC MOSFETs (metal-oxide-semiconductor field-effect transistors) using EDMR spectroscopy, such as implantation-damage centers in Si, dry-etching damages in Si, and MOS interface defects in 4H-SiC/SiO₂ systems.