[17p-M_B07-1~10] Frontiers of Semiconductor Characterization Techniques

4:10 PM - 4:30 PM JST(7:10 AM - 7:30 AM UTC)

[17p-M_B07-7] Relationship between Physical Properties and Pattern Collapse Rate in Sublimation Drying

〇Hiroyuki Fukue¹, Ryuta Tsukahara¹, Chen Kuang¹, Sosuke Hori¹, Naoya Torikai² (1.SCREEN Semiconductor Solutions Co. ltd., 2.Grad. Sch. of Eng., Mie Univ.)

Keywords:

wet process,pattern collapse,sublimation drying

As semiconductor devices continue to scale down, the collapse of patterns during the drying stage of the wafer cleaning process has emerged as a critical challenge. We are studying sublimation drying technology. In this study, we assumed that the physical properties of the sublimation thin films influence pattern collapse, and therefore measured their film density using X ray reflectivity. As a result, it was suggested that forming interconnects using sublimation thin films with an optimal film density is essential for achieving sublimation drying performance.