Presentation Information
[17p-PB3-11]Influence of residence time on gas utilization efficiency
in Ar/CH4 plasma for DLC films deposition
〇(M1)Yu Uematsu1, Hiroyuki Kousaka2, Akinori Oda1 (1.Chiba Tech, 2.Gifu Univ.)
Keywords:
low-pressure plasma,plasma CVD,simulation
Plasma chemical vapor deposition (CVD) is widely used for uniform low-temperature film growth. However, low gas utilization efficiency remains a challenge, as most source gas is exhausted unreacted. To improve this efficiency in DLC film deposition, we performed a numerical analysis using a spatially one-dimensional fluid model of low-pressure RF Ar/CH4 plasma. This study reports on the influence of gas residence time on plasma characteristics.