[17p-W2_401-1~17] 15.4 III-V-group nitride crystals

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[17p-W2_401-1] [15 Crystal Engineering Invited Talk] Oxide Vapor Phase Epitaxy Growth of GaN Crystals Using Seeds Prepared by the Na-Flux Method

〇Masayuki Imanishi¹, Shigeyoshi Usami¹, Yusuke Mori¹ (1.The Univ. of Osaka,)

Keywords:

GaN,Oxide vapor phase epitaxy method,Na-flux method

We carried out oxide vapor phase epitaxy (OVPE) growth using GaN crystals prepared by the Na flux method as seed crystals. Although the rupture of inclusions within the seed crystals had previously been a major issue during high temperature growth, the use of GaN crystals with reduced inclusions fabricated by the Flux Film Coated (FFC) method enabled growth at temperatures above 1200°C.The surface pit density, which has been reported to correspond to the dislocation density, was measured to be 2.2×10⁴ cm^-2, suggesting that the dislocation density was reduced compared with that of the seed crystal.