The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[17p-W2_401-1~17]15.4 III-V-group nitride crystals

Tue. Mar 17, 2026 1:30 PM - 6:30 PM JST
Tue. Mar 17, 2026 4:30 AM - 9:30 AM UTC
W2_401 (West Bldg. 2)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[17p-W2_401-1][15 Crystal Engineering Invited Talk] Oxide Vapor Phase Epitaxy Growth of GaN Crystals Using Seeds Prepared by the Na-Flux Method

〇Masayuki Imanishi1, Shigeyoshi Usami1, Yusuke Mori1 (1.The Univ. of Osaka,)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-W2_401-2]Investigation of Pseudo-ELO GaN Growth on ScAlMgO4 Substrate by THVPE

〇(D)Shina Momiyama1, Nakai Satoru1, Michibata Kenta1, Murakami Hisashi1 (1.BASE.TUAT)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-W2_401-3]Influence of MOVPE Growth Conditions on Carbon Concentration in GaN

〇Kazuhiro Ohkawa1, Hideto Miyake1 (1.Mie Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W2_401-4]Optimization of N-polar/Ga-polar GaN Epitaxial Polarity Inversion Process by MOVPE

〇(M2)Kanako Ueda1, Kazuhisa Ikeda2, Kanta Taniguchi1, Satoshi Ichikawa3, Jun Yamasaki1,3, Masahiro Uemukai1, Tomoyuki Tanikawa1, Ryuji Katayama1 (1.Grad. Sch. of Eng., The Univ. of Osaka, 2.Tokyo Univ. of Science, 3.Res. Ctr. for UHVEM, The Univ. of Osaka)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[17p-W2_401-5]Epitaxial growth of N-polar GaN on N-polar AlN template by MOVPE

〇(M1)Kaito Fujiwara1, Satoshi Kurai1, Narihito Okada1, Youichi Yamada1 (1.Grad. School of Sci & Tech. for Innovation, Yamaguchi Univ.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[17p-W2_401-6]Quantum injection crossover in ultra-degenerate GaN/metal interfaces

〇Kohei Ueno1, Kohei Okabe1, Aiko Naito1, Hiroshi Fujioka1 (1.IIS, UTokyo)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[17p-W2_401-7]Structural and Electrical Characterization of Heavily Si-Doped InGaN Grown by Pulsed Sputtering

〇Kazuma Ueno1, Kohei Ueno1, Hiroshi Fujioka1 (1.Tokyo Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[17p-W2_401-8]Influence of Graphene/SiC(0001) Substrate Surface Morphology on the Crystallinity of Nitride Thin Films

〇Hodaka Hamamoto1, Keisuke Takemoto1, Yusuke Zushi1, Kohei Ueno2, Hiroshi Fujioka2 (1.Nissan Motor Co., 2.Univ. of Tokyo)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W2_401-9]Evaluation of the Mechanical and Optical Properties of Nitride Semiconductors on Si(001) Substrates Fabricated by RF-MBE and Investigation of Conditions
for Producing High-Quality Semiconductors

〇(M2)Kanata Shibuta1, Shyun Koshiba1, Masaru Terabayashi1, Hidefumi Akiyama2 (1.Kagawa Univ., 2.Tokyo Univ.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[17p-W2_401-10]RF-MBE growth of GaN on single-crystal diamond substrates

〇Yoshito Kano1, Tsutomu Araki2, Momoko Deura1,3 (1.Waseda Univ., 2.Ritsumeikan Univ, 3.R-GIRO)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[17p-W2_401-11]Study on the fabrication of GaN nanowires on -c plane GaN
by rf-molecular-beam-epitaxy

〇Kousei Hikosaka1,2, Sekiguchi Masaya1,2, Motohisa Junichi1,2 (1.Hokkaido Univ., 2.RCIQE)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[17p-W2_401-12]Fabrication and Characterization of NW Schottky Barrier Diodes using GaN Nanowires Selectively Grown by RF-MBE

〇Masaya Sekiguchi1, Kousei Hikosaka1, Zyunnichi Motohisa1 (1.RCIQE Hokkaido Univ.)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[17p-W2_401-13][The 59th Young Scientist Presentation Award Speech] High-Speed 3D Imaging of Threading Dislocations in GaN Using Stimulated Raman Scattering Microscopy

〇Shun Takahashi1, Yusuke Wakamoto1, Kazuhiro Kuruma2, Takuya Maeda1, Yasuyuki Ozeki1,2 (1.UTokyo, 2.RCAST)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[17p-W2_401-14]Nondestructive Detection of Threading Dislocations with a-Type Burgers Vector Components in GaN Crystals by Phase-Contrast Microscopy

〇Yukari Ishikawa1, Hattori Ryo2, Yongzhao Yao1,3, Daiki Katsube1, Koji Sato1 (1.JFCC, 2.CF, 3.Mie Univ.)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[17p-W2_401-15]Observation of dislocations in GaN bulk substrates by multi-beam excitation SR-XRT

〇Yongzhao Yao1,3, Kazuki Ohnishi1, Yoshiyuki Tsusaka2, Yukari Ishikawa3 (1.Mie Univ., 2.Univ. of Hyogo, 3.JFCC)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[17p-W2_401-16]Dislocation analysis of GaN substrates via reflection and transmission XRT

〇Kazuki Ohnishi1, Kenji Iso2, Hirotaka Ikeda2, Yoshiyuki Tsusaka3, Yongzhao Yao1 (1.Mie Univ., 2.Mitsubishi Chemical, 3.Univ. of Hyogo)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W2_401-17]Structural analysis of N-polar AlN on a tiny-pit layer by TEM

〇(B)Harunobu Hatano1, Kazuki Ohnishi1, Taisei Kimoto2, Narihito Okada2, Yongzhao Yao1 (1.Mie Univ., 2.Yamaguchi Univ.)
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