[17p-W2_401-1~17] 15.4 III-V-group nitride crystals

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[17p-W2_401-11] Study on the fabrication of GaN nanowires on -c plane GaN
by rf-molecular-beam-epitaxy

〇Kousei Hikosaka^1,2, Sekiguchi Masaya^1,2, Motohisa Junichi^1,2 (1.Hokkaido Univ., 2.RCIQE)

Keywords:

gallium nitride,nanowire,crystal growth