[17p-W2_401-1~17] 15.4 III-V-group nitride crystals

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[17p-W2_401-12] Fabrication and Characterization of NW Schottky Barrier Diodes using GaN Nanowires Selectively Grown by RF-MBE

〇Masaya Sekiguchi¹, Kousei Hikosaka¹, Zyunnichi Motohisa¹ (1.RCIQE Hokkaido Univ.)

Keywords:

GaN,eptaxial growth,schottky barrier diodes

Schottky barrier diodes (SBDs) were fabricated using GaN nanowires formed by selective-area growth via RF molecular beam epitaxy (RF-MBE). For comparison, SBDs were also fabricated on planar GaN grown by RF-MBE as well as on conventional n-GaN epitaxial samples, and their current–voltage (I–V) characteristics were systematically compared.