[17p-W2_401-1~17] 15.4 III-V-group nitride crystals

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[17p-W2_401-13] [The 59th Young Scientist Presentation Award Speech] High-Speed 3D Imaging of Threading Dislocations in GaN Using Stimulated Raman Scattering Microscopy

〇Shun Takahashi¹, Yusuke Wakamoto¹, Kazuhiro Kuruma², Takuya Maeda¹, Yasuyuki Ozeki^1,2 (1.UTokyo, 2.RCAST)

Keywords:

GaN,dislocation,stimulated Raman scattering

We applied stimulated Raman scattering (SRS) microscopy, which is capable of high-speed imaging, to the observation of threading dislocations in a gallium nitride (GaN) substrate and succeessfully achieved non-destructive, three-dimensional imaging of strain fields around them. In addition to the SRS signal detection through transmitted pulses, multiphoton excited photoluminescence (MPPL) signals were collected in the epi-detection. Combining the information obtained from SRS and MPPL enables detailed characterization of dislocations.