Presentation Information

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-W2_401-3]Influence of MOVPE Growth Conditions on Carbon Concentration in GaN

〇Kazuhiro Ohkawa¹, Hideto Miyake¹ (1.Mie Univ.)

Keywords:

Nitride semiconductor,MOVPE,Carbon

We report the influence of metalorganic vapor-phase epitaxy (MOVPE) growth conditions on the carbon concentration in GaN thin films. Experiments and simulations revealed that the primary carbon source is methyl groups (CH3) originating from the metalorganic precursor gases. The simulated carbon incorporation as a function of the V/III ratio shows good agreement with the experimental results. This behavior is attributed to the redox reaction between methyl radicals and methane molecules mediated by ammonia. The presentation will also discuss the effect of GaN growth temperature.

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