Presentation Information
[17p-W2_401-5]Epitaxial growth of N-polar GaN on N-polar AlN template by MOVPE
〇(M1)Kaito Fujiwara1, Satoshi Kurai1, Narihito Okada1, Youichi Yamada1 (1.Grad. School of Sci & Tech. for Innovation, Yamaguchi Univ.)
Keywords:
MOVPE,N-polar GaN,N-polar AlN
N-polar GaN growth on N-polar AlN templates was investigated using metal–organic vapor phase epitaxy (MOVPE). c-plane sapphire substrates with off-cut angles of 0.2° and 0.8° were employed, and their effects on surface morphology and crystalline quality were evaluated. As a result of KOH selective etching, stable N-polar GaN growth without polarity inversion was confirmed. A relatively flat surface with low roughness was obtained for the 0.2° off-cut substrate, whereas pronounced step bunching and surface roughening were observed for the 0.8° off-cut substrate. These results demonstrate that the substrate off-cut angle significantly influences the surface morphology and crystalline quality.