[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[17p-W8E_101-1] Electric Properties of N-polar GaN-channel HEMT on High-Resistivity AlGaN Buffer

〇Takuya Hoshi¹, Yuki Yoshiya¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT, Inc.)

Keywords:

N-polar GaN-channel HEMT,4-inch C-face 4H-SiC substrate,High-resistivity AlGaN buffer