The 73rd JSAP Spring Meeting 2026
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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[17p-W8E_101-1~18]13.7 Compound and power devices, process technology and characterization

Tue. Mar 17, 2026 1:30 PM - 6:30 PM JST
Tue. Mar 17, 2026 4:30 AM - 9:30 AM UTC
W8E_101 (West Bldg. 8)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[17p-W8E_101-1]Electric Properties of N-polar GaN-channel HEMT on High-Resistivity AlGaN Buffer

〇Takuya Hoshi1, Yuki Yoshiya1, Hiroki Sugiyama1, Fumito Nakajima1 (1.NTT, Inc.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[17p-W8E_101-2]Simple N-polar HEMT Structure on Thick High-Al-Content AlGaN Buffer

〇Takuya Hoshi1, Yuki Yoshiya1, Taro Sasaki1, Hiroki Sugiyama1, Fumito Nakajima1 (1.NTT, Inc.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-W8E_101-3]N-polar GaN HEMT with high-resistivity C-doped GaN buffer layer (2)

〇Yuki Yoshiya1, Takuya Hoshi1, Taro Sasaki1, Hiroki Sugiyama1, Fumito Nakajima1 (1.NTT Device Technology Labs.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-W8E_101-4]Effects of Surface Passivation on Electrical Characteristics of N-polar GaN/AlN HEMTs

〇(M1)Nobuteru Hirata1, Ryosuke Ninoki1, Zazuli Aina Hiyama1, Yuya Kitamura1, Fumiya Yamanaka1, Amane Hayashiuchi1, Satoshi Kurai1, Narihito Okada1, Youiti Yamada1 (1.Grad. School of Sci. & Tech. for Innovation.Yamaguthi Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[17p-W8E_101-5]Fabrication method and electrical characteristics of N-polarity GaN/AlGaN HEMTs using the back surface of Ga-polarity growth GaN

〇Rito Akagawa1, Atsushi Yamada3, Naoki Fujimoto2, Jun Taniguchi3, Yuichi Minoura3, Yuta Furusawa2, Ryoko Tsukamoto2, Maciej Matys3, Manabu Arai2, Jun Suda2, Yoshio Honda2, Atsushi Tanaka2, Toshihiro Ohki3, Norikazu Nakamura3, Hiroshi Amano2 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Fujitsu Limited)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W8E_101-6]GaN HEMT using High-k films with thickness distribution between GD

〇Itsuki Yoshida1, Yasuyuki Miyamoto1 (1.Science Tokyo)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W8E_101-7]Extraction of Cap-Channel Interfacial Resistance in Wide Recess AlGaN/GaN HEMTs with an n+ Cap Layer Using Two-Layer Transmission Line Model

〇Takuya Fujimoto1, Yuji Ando1,2, Hidemasa Takahashi1, Ryutaro Makisako1, Akio Wakejima3, Jun Suda1,2 (1.Nagoya Univ., 2.IMass, Nagoya Univ., 3.Kumamoto Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W8E_101-8]RF power amplification of AlN-based polarization-doped FETs

〇Seiya Kawasaki1, Masanobu Hiroki1, Kazuyuki Hirama1, Yoshitaka Taniyasu1 (1.NTT BRL)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W8E_101-9]Demonstration of Extremely Low On-Resistance AlN-based SBDs with Distributed Polarization Doping

〇Issei Sasaki1, Masanobu Hiroki2, Kazuaki Ebata2, Kazuyuki Hirama2, Yoshitaka Taniyasu2, Takuya Maeda1 (1.UTokyo, 2.NTT-BRL)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[17p-W8E_101-10]One-dimensional Friedel oscillations in a composition-graded AlGaN layer with distributed polarization doping

〇Takuya Maeda1, Issei Sasaki1, Masanobu Hiroki2, Kazuaki Ebata2, Kazuyuki Hirama2, Yoshitaka Taniyasu2 (1.Univ. of Tokyo, EEIS, 2.Basic Research Lab., NTT Co.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W8E_101-11]Quantum Relaxation Time from Shubnikov-de Haas Oscillations of 2DEG in AlGaN/AlN/GaN and ScAlN/AlGaN/AlN/GaN Heterostructures

〇Yusuke Wakamoto1, Koei Kubota1, Tomoya Okuda3, Takahiko Kawahara2, Shigeki Yoshida2, Kozo Makiyama2, Ken Nakata2, Atsushi Kobayashi3, Takuya Maeda1 (1.UTokyo, 2.Sumitomo Electric Industries, Ltd, 3.Tokyo Univ. of Science)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W8E_101-12]Negative Shift of Threshold Voltage due to Bias Stress in Pseudomorphic AlN/GaN/AlN HEMTs

〇Omino Mori1, Lee Taegi2,3, Yoshikawa Akira2,3, Sugiyama Sho2,3, Arai Manabu3, Ando Yuji1,3, Suda Jun1,3, Amano Hiroshi1,3 (1.Nagoya Univ., 2.Asahi Kasei, 3.IMass)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[17p-W8E_101-13]Electrical characterization of deep trap states with HEMTs fabricated on GaN substrates

〇Takashi Matsuda1, Tsutomu Matsuura1, Hiroaki Hayashi1 (1.Mitsubishi Electric corp., ATC)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[17p-W8E_101-14]Dependence of Current Collapse Phenomena on Punch-Through Voltage in GaN-HEMT

〇Yushin Nagai1, Toru Sugiyama1, Yiyao Liu1, Umer Farooq1, Akira Yoshioka1 (1.Toshiba Electronic Devices & Storage)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[17p-W8E_101-15]Suppression of Current Collapse phenomena in GaN HEMTs by an AlGaN Cap Layer

〇Shugo Nishimura1, Kazuki Kiyohara1, Kosuke Miura1, Takahiro Saito1, Shintaro Ueda1, Akira Yoshioka1 (1.Toshiba Electronic Devices & Storage)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[17p-W8E_101-16]Enhancement of Electron Mobility for GaN based Heterojunction by Quasi-Modulation Doped Structure

〇Kazuki Kodama1, Chee-How Lu1, You-Chen Weng1, Yuan Lin1, Yu-hao Chen1, Daisuke Ueda1, Yi Chang1 (1.NYCU)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)English Presentation

[17p-W8E_101-17]High-Gain and Low-Noise InAlGaN/GaN HEMTs on Si for Ka-Band Communication Applications

〇(PC)Weng YouChen1, Chee-How Lu1, Hung-Wei Yu1, Chun-Hao Chen1, Hao-Chung Kuo2, edward-Yi Chang1 (1.NYCU, 2.Hon Hai)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[17p-W8E_101-18]Suitable Processing Conditions for Recess-Gate GaN-HEMTs using Photoelectrochemial (PEC) Reactions

〇Tsutomu Matsuura1, Yuki Takiguchi1, Koji Yoshitsugu1, Hiroaki Hayashi1, Eiji Yagyu1, Taketomo Sato2, Takashi Takenaga1 (1.Mitsubishi Electric, 2.RCIQE)
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