[17p-W8E_101-1~18] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[17p-W8E_101-10] One-dimensional Friedel oscillations in a composition-graded AlGaN layer with distributed polarization doping

〇Takuya Maeda¹, Issei Sasaki¹, Masanobu Hiroki², Kazuaki Ebata², Kazuyuki Hirama², Yoshitaka Taniyasu² (1.Univ. of Tokyo, EEIS, 2.Basic Research Lab., NTT Co.)

Keywords:

Aluminum Nitride (AlN),Friedel oscillation,polarization doping

In this study, we fabricated AlN-based Schottky barrier diodes (SBDs) featuring a compositionally graded AlGaN drift layer, and conducted a detailed investigation of their space charge distribution. Capacitance-voltage (C-V) measurements revealed a generally linear but undulating characteristic, and a distinct damped oscillation structure was observed in the depth profile of the space charge density. It was found that this oscillation represents the one-dimensional Friedel oscillations in the film-thickness direction within a three-dimensional electron gas generated by distributed polarization doping (DPD) without ionized impurities.